Determination of Trace Elements in Sintered and Single-Crystal Silicon Carbide by Laser Ablation in Liquid Inductively Coupled Plasma Mass Spectrometry
Determination of Trace Elements in Sintered and Single-Crystal Silicon Carbide by Laser Ablation in Liquid Inductively Coupled Plasma Mass Spectrometry
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DOI：
10.2116/analsci.33.537
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发表时间：
2017-04-01
影响因子：
1.6
通讯作者：
Furuta, Naoki
中科院分区：
文献类型：
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作者：
Machida, Ryo;Nishioka, Rina;Furuta, Naoki
液体激光烧蚀(LAL)采样法将难消化的物质转化为可溶颗粒，从而可以通过酸消化顺利分解。激光采样有助于从污染较少的样品中生成纳米颗粒。酸消解后，用溶液雾化电感耦合等离子体质谱(ICPMS)分析LAL样品中的微量元素。首次证明了LAL-ICPMS可用于难消化的碳化硅和单晶碳化硅样品中痕量元素的测定。比较了激光消融ICPMS和Lal-ICPMS在准确度和检出限方面的差异。Lal-ICPMS对铝、钛、铬、锰、铁、钴、镍、铜、锶、Y、锆和钨的检出限为0.04~0.4tgg(-1)，有望用于半导体器件制造过程中的污染控制。
Laser ablation in liquid (LAL) sampling method transformed hard-to-digest materials to soluble particles, and thus allowed for smooth decomposition by acid digestion. LAL sampling is useful to generate nanoparticles from samples with less contamination. After acid digestion, trace elements in the LAL-sampled particles were analyzed by solution nebulization inductively coupled plasma mass spectrometry (ICPMS). For the first time we demonstrated that LAL-ICPMS can be used to determine trace elements in hard-to-digest samples; sintered SiC and single-crystal SiC. Results obtained by laser ablation ICPMS and LAL-ICPMS were compared in terms of accuracy and detection limits. The detection limits of LAL-ICPMS were 0.04-0.4 tg g(-1) for Al, Ti, Cr, Mn, Fe, Co, Ni, Cu, Sr, Y, Zr, and W. LAL-ICPMS is expected to be used to control contamination in the manufacturing of semiconductor devices.