The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces
The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces
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DOI：
10.1063/1.4883865
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发表时间：
2014-06
影响因子：
4
通讯作者：
J. Tao;J. Chai;Z. Zhang;J. S. Pan;S. J. Wang
中科院分区：
文献类型：
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作者：
J. Tao;J. Chai;Z. Zhang;J. S. Pan;S. J. Wang
利用光电子能谱研究了高k电介质氧化物上二硫化钼（MoS 2）薄膜的能带排列。单层MoS 2/Al 2 O3（ZrO 2）界面的价带偏移（VBO）为3.31 eV（2.76 eV），而导带偏移（CBO）为3.56 eV（1.22 eV）。对于体相MoS_2/Al_2O_3界面，由于Mo 4dz ~ 2带的上移，VBO和CBO都增加了约0.3eV。VBO和CBO的对称变化暗示了界面态对费米能级的钉扎。我们的发现确保了p型和n型MoS 2基互补金属氧化物半导体和其他晶体管器件使用Al 2 O3和ZrO 2作为栅极材料的实际应用。
Energy-band alignments for molybdenum disulphide (MoS2) films on high-k dielectric oxides have been studied using photoemission spectroscopy. The valence band offset (VBO) at monolayer MoS2/Al2O3 (ZrO2) interface was measured to be 3.31 eV (2.76 eV), while the conduction-band offset (CBO) was 3.56 eV (1.22 eV). For bulk MoS2/Al2O3 interface, both VBO and CBO increase by ∼0.3 eV, due to the upwards shift of Mo 4dz2 band. The symmetric change of VBO and CBO implies Fermi level pinning by interfacial states. Our finding ensures the practical application of both p-type and n-type MoS2 based complementary metal-oxide semiconductor and other transistor devices using Al2O3 and ZrO2 as gate materials.