Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing
Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing
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重离子注入和退火形成的4H-碳化硅的本征色心
DOI：
10.1088/1361-6463/ac3a49
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Heiko B. Weber
中科院分区：
文献类型：
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作者：
Takuma Kobayashi;Maximilian Rühl;Johannes Lehmeyer;Leonard Zimmermann;Michael Krieger;Heiko B. Weber
本文研究了重离子注入和退火处理对4 H型碳化硅中本征发光中心的产生和转变的影响。由锗（Ge）或锡（Sn）注入引起的缺陷已被其特征在于在低温下记录的光致发光（PL）光谱。在高剂量注入（> 4× 10 13 cm− 2）和高温退火（> 1700 C）后，我们发现了三个主要的但尚未确定的PL特征（标记为DI 1-3），波长为1002.8 nm（DI 1），1004.7 nm（DI 2）和1006.1 nm（DI 3）。DI线共同出现并且在能量上靠近在一起的事实表明它们起源于相同的缺陷。无论注入离子（Ge或Sn）如何，当注入损伤变高（空位浓度> 10 22 cm-3）时，观察到它们的PL强度急剧增加，表明这些线源于由损伤引起的本征缺陷。通过跟踪逐步退火后的PL信号，我们研究了在500-1800 C的温度范围内，由注入形成的硅空位在约1000 C的退火下转变为双空位或反位空位对。这些光谱特征在1200 C下强烈降低，其中所谓的TS缺陷在发光中最大化。作为最后一个阶段，DI缺陷，这是最有可能形成的反位和空缺，出现在1700 ℃。我们的研究结果提供了一个知识，如何纳入和操纵的SiC与离子注入和退火的内在发光中心，铺平了道路，采用SiC的完全集成的量子技术。
We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI 1–3) at the wavelength of 1002.8 nm (DI 1), 1004.7 nm (DI 2), and 1006.1 nm (DI 3) after high dose implantation (> 4× 10 13 cm− 2) and high temperature annealing (> 1700 C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration> 10 22 cm− 3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500–1800 C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000 C. These spectral signatures are strongly reduced at 1200 C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700 C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.