Direct synthesis of graphene on any nonmetallic substrate based on KrF laser ablation of ordered pyrolytic graphite
Direct synthesis of graphene on any nonmetallic substrate based on KrF laser ablation of ordered pyrolytic graphite
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DOI：
10.1088/1612-2011/11/9/096001
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发表时间：
2014-09
影响因子：
1.7
通讯作者：
Shicai Xu;B. Man;S. Jiang;A. Liu;G. Hu;C. S. Chen;M. Liu;Cheng Yang;D. Feng;C. Zhang
中科院分区：
文献类型：
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作者：
Shicai Xu;B. Man;S. Jiang;A. Liu;G. Hu;C. S. Chen;M. Liu;Cheng Yang;D. Feng;C. Zhang
我们提出了一种利用准分子KrF激光烧蚀有序热解石墨在非金属基底上生长少层石墨烯的方法。石墨烯是可缩放的，并且其厚度是可控的。它可以在750 °C的相对低温下沉积在几乎任何非金属基材上。这种基于激光的方法效率很高，整个生长过程不到100 s。拉曼光谱证实形成了具有约40 nm晶粒尺寸的sp2键合碳。石墨烯膜的光学透射率和电导率与剥离的或金属催化的石墨烯相当。这项工作展示了一种很有前途的基于激光的，无转移的石墨烯合成技术。
We present a method for few-layer graphene growth on nonmetallic substrates using excimer KrF laser ablation of ordered pyrolytic graphite. The graphene is scalable and its thickness is controllable. It can be deposited on virtually any nonmetallic substrates at a relative low temperature of 750 °C. This laser-based method is highly efficient and the whole growing process takes less than 100 s. Raman spectroscopy confirms the formation of sp2-bonded carbon with a grain size of about 40 nm. The optical transmittance and conductivity of the graphene films are comparable with exfoliated or metal-catalyzed graphene. This work demonstrates a promising laser-based, transfer-free technique for synthesis of graphene.