Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
复制标题
DOI：
10.1109/tpel.2011.2125803
复制
发表时间：
2011-03
影响因子：
6.7
通讯作者：
A. Bryant;Shaoyong Yang;P. Mawby;D. Xiang;L. Ran;P. Tavner;P. Palmer
中科院分区：
文献类型：
--
作者：
A. Bryant;Shaoyong Yang;P. Mawby;D. Xiang;L. Ran;P. Tavner;P. Palmer
在许多功率转换器应用中，特别是具有高可变负载的那些应用，例如牵引和风力，转换器中的功率半导体器件的状态监测被认为是期望的。在这种转换器中，监测器件结温是这一过程的重要组成部分。本文提出了一种利用IGBT集电极关断电压dV/dt测量IGBT结温的方法。导出了关断时dV/dt的理论封闭式表达式，与实验测量结果吻合较好。讨论了dV/dt在高压IGBT动态雪崩中的作用。最后，的dV/dt的温度依赖性的影响进行了讨论，包括实现这样的温度测量技术。
In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique.