Bright electron emission from Si-doped AlN thin films

Bright electron emission from Si-doped AlN thin films
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DOI：
10.1002/pssc.200674815
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发表时间：
2007-06
期刊：
Physica Status Solidi (c)
影响因子：
--
通讯作者：
A. Kishimoto;Y. Inou;T. Kita;O. Wada
A. Kishimoto;Y. Inou;T. Kita;O. Wada
中科院分区：
其他
文献类型：
--
作者：
A. Kishimoto;Y. Inou;T. Kita;O. Wada

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We report the emission properties of the low temperature grown Si-doped AlN thin films by reactive radio-frequency magnetron sputtering technique. With increasing Si-doping concentration, the emission characteristics have been improved. The low threshold electric field of 4.4 V/μm, and the saturation current density of 0.74 mA/cm2 has been obtained. According to analysis of the I-V characteristics, it is found that the low effective work function causes the high emission performance. The luminance by using blue phosphor exceeds 700 cd/m2. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)