Silicon Nanowires/Reduced Graphene Oxide Composites for Enhanced Photoelectrochemical Properties
Silicon Nanowires/Reduced Graphene Oxide Composites for Enhanced Photoelectrochemical Properties
复制标题
硅纳米线/还原氧化石墨烯复合材料可增强光电化学性能
DOI：
10.1021/am3027458
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发表时间：
2013-03-27
影响因子：
9.5
通讯作者：
Zhang, Chi
中科院分区：
文献类型：
--
作者：
Huang, Zhipeng;Zhong, Peng;Zhang, Chi
采用简单的旋涂法在硅纳米线阵列的顶部涂覆还原氧化石墨烯。所得SiNWs/rGO复合材料具有增强的光电化学性能，短路光电流密度比原始SiNWs高4倍以上，比平面Si/rGO复合材料高600倍以上。在硅纳米线的表面态的光生载流子的捕获和复合后的应用程序的rGO减少。电化学阻抗谱的测量结果表明，SiNWs-rGO界面和rGO-电解质界面的电荷转移电阻较低，从而降低了光生载流子的俘获和复合，并显著提高了光电化学性能.该方法和结果为进一步开发高活性光电化学材料提供了一种简便可行的途径。
The top of silicon nanowires (SiNWs) arrays was coated with reduced graphene oxide (rGO) by the facile spin-coating method. The resulting SiNWs/rGO composite exhibits enhanced photoelectrochemical properties, with short-circuit photocurrent density more than 4 times higher than that of the pristine SiNWs and more than 600 times higher than that of planar Si/rGO composite. The trapping and recombination of photogenerated carriers at the surface state of SiNWs were reduced after the application of rGO. The results of electrochemical impedance spectroscopy measurements suggest that the reduction of trapping and recombination of photogenerated carriers as well as remarkably enhancement of photoelectrochemical properties can be attributed to the low charge transfer resistance at the SiNWs-rGO interface and rGO-electrolyte interface. The method and results shown here indicate a convenient and applicable approach to further exploitation of high activity materials for photoelectrochemical applications.