Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method.
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method.
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通过微波光电导衰减法测量半导体中的载流子寿命。
DOI：
10.3791/59007
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
M. Kato
中科院分区：
文献类型：
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作者：
Takatoshi Asada;Yoshihito Ichikawa;M. Kato
本文提出了一种利用微波光导衰减（μ-PCD）测量半导体材料，特别是SiC载流子寿命的方法。原则上，半导体中通过激励产生的多余载流子随时间重新组合，随后返回到平衡状态。这种复合的时间常数被称为载流子寿命，这是半导体材料和器件中的一个重要参数，需要μ-PCD理想地实现非接触和非破坏性测量。在样品的辐照过程中，一部分微波被半导体样品反射。微波反射率取决于样品的电导率，而电导率是由载流子决定的。因此，可以通过检测反射微波强度来观察多余载流子的时间衰减，并分析其衰减曲线来估计载流子的寿命。结果证实了μ-PCD协议在半导体材料和器件的载流子寿命测量中的适用性。
This work presents a protocol employing the microwave photoconductivity decay (μ-PCD) for measurement of the carrier lifetime in semiconductor materials, especially SiC. In principle, excess carriers in the semiconductor generated via excitation recombine with time and, subsequently, return to the equilibrium state. The time constant of this recombination is known as the carrier lifetime, an important parameter in semiconductor materials and devices that requires a noncontact and nondestructive measurement ideally achieved by the μ-PCD. During irradiation of a sample, a part of the microwave is reflected by the semiconductor sample. Microwave reflectance depends on the sample conductivity, which is attributed to the carriers. Therefore, the time decay of excess carriers can be observed through detection of the reflected microwave intensity, whose decay curve can be analyzed for estimation of the carrier lifetime. Results confirm the suitability of the μ-PCD protocol in measuring the carrier lifetime in semiconductor materials and devices.