Space-charge-effect-induced large magnetoresistance in silicon
Space-charge-effect-induced large magnetoresistance in silicon
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DOI：
10.1088/1742-6596/193/1/012001
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发表时间：
2009-11
期刊：
影响因子：
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通讯作者：
Michael P. Delmo;S. Kasai;K. Kobayashi;T. Ono
中科院分区：
文献类型：
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作者：
Michael P. Delmo;S. Kasai;K. Kobayashi;T. Ono
我们报告说，硅在 0 到 3 T 之间表现出较大的正磁阻 (MR)，在 300 K 时超过 1,000%，在 25 K 时超过 3,000%。对轻掺杂硅的实验表明，当载流子密度降至 1013 cm−3 以下时，由于空间电荷效应，MR 变得明显。我们提出，空间电荷效应的准中性破坏会引入电场不均匀性，类似于在其他半导体中观察到非饱和正磁流变的情况。我们已经实现了一种在室温下工作的磁阻器件，其结构更简单，与其他已知的金属-半导体混合器件不同。
We report that silicon shows large positive magnetoresistance (MR) between 0 and 3 T more than 1,000 per cent at 300 K and 3,000 per cent at 25 K. The experiment on lightly doped silicon reveals that when the carrier density decreases below 1013 cm−3 the MR becomes pronounced due to the space-charge effect. We propose that the quasi-neutrality breaking of the space-charge effect can introduce electric field inhomogeneity, similar to the situation in other semiconductors where the non-saturating positive MR was observed. We have realized a magnetoresistive device that works at room temperature with simpler structure in a way different from other known metal-semiconductor hybrid devices.