InP-GaInP quantum-dot lasers emitting between 690-750 nm
InP-GaInP quantum-dot lasers emitting between 690-750 nm
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InP-GaInP 量子点激光器发射波长 690-750 nm
DOI：
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发表时间：
2005
影响因子：
4.9
通讯作者：
P. Houston
中科院分区：
文献类型：
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作者：
P. Smowton;J. Lutti;G. Lewis;A. Krysa;J. Roberts;P. Houston
我们描述了工作在690-750 nm范围内的InP-GaInP量子点激光器的生长、材料特性和器件特性。结果表明，生长条件对增益谱的形状有很大影响。采用含双峰分布的样品，可以在300K时获得90 nm的相对平坦的增益，或者通过使用(211)B衬底抑制双峰分布，可以在较短波长获得更窄的增益谱。对生长在衬底上的样品进行优化，使生长表面的(100)取向偏差为10/spl°/朝向[111]，结果是激光工作在729-741 nm之间，对于无涂层的2000-/splµ/m长的器件，室温阈值电流密度低至190 A/spl Midpoint/cm/sup-2/。
We describe the growth, material characterization, and device characterization of InP-GaInP quantum-dot lasers for operation in the wavelength range 690-750 nm. We show that the growth conditions have a major influence on the form of the gain spectrum. Relatively flat gain can be achieved over a spectral width of 90 nm at 300 K using samples containing a bimodal distribution of dot sizes, or narrower gain spectra at shorter wavelength can be achieved by suppressing the bimodal distribution by using (211)B substrates. Optimization of samples grown on substrates with the growth surface of (100) misorientated by 10/spl deg/ toward [111] results in laser operation between 729 and 741 nm and with a room temperature threshold current density as low as 190 A/spl middot/cm/sup -2/ for a 2000-/spl mu/m-long device with uncoated facets.