Optical and photoconductive properties of discharge‐produced amorphous silicon
Optical and photoconductive properties of discharge‐produced amorphous silicon
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放电产生的非晶硅的光学和光电导特性
DOI：
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发表时间：
1977
期刊：
影响因子：
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通讯作者：
D. Carlson
中科院分区：
文献类型：
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作者：
P. Zanzucchi;C. Wronski;D. Carlson
研究了用于高效薄膜太阳能电池的放电产生的非晶硅(a-Si)的光学和光电导特性作为广泛的沉积条件的函数。测量了a-Si的光吸收、光学带隙、光电导、氢含量和Si-H振动模的特性。在∼200-400 °C范围内的衬底温度和所使用的放电类型都被发现是决定所测量的a-Si的光学和光导性质的重要因素。当衬底温度接近2 0 0 °C时，薄膜发生二氢键结合，光学带隙约为1.7 eV。随着衬底温度的升高，单氢键越有利，光学带隙越小，光吸收越大，光导性能越好。这些性质部分地与键合氢的存在有关。当衬底温度在300~400 °C之间时，光电导...
Optical and photoconductive properties of discharge‐produced amorphous silicon (a‐Si) of the type used in efficient thin‐film solar cells have been studied as a function of a wide range of deposition conditions. The optical absorption, optical band gap, photoconductivity, hydrogen content, and the characteristics of the Si‐H vibrational mode in a‐Si were determined. Both substrate temperature in the range ∼200–400 °C and the type of discharge used are found to be important factors in determining the measured optical and photoconductive properties of a‐Si. For films produced at substrate temperatures near 200 °C, dihydride bonding occurs, and the optical band gap is about 1.7 eV. As the substrate temerature increases, monohydride bonding is favored, the optical band gap decreases, the optical absorption increases, and the photoconductive properties improve. These properties are, in part, associated with the presence of bonded hydrogen. For substrate temperatures between 300 and 400 °C, the photoconductive ...