Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure
Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure
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In0.83Ga0.17As光电二极管欧姆接触的温度依赖性及其与界面微观结构的相关性
DOI：
10.1007/s00339-015-9467-7
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发表时间：
2015-11-01
影响因子：
2.7
通讯作者：
Gong, Haimei
中科院分区：
文献类型：
--
作者：
Cao, Gaoqi;Tang, Hengjing;Gong, Haimei
在163-373 K温度范围内，系统地研究了In_（0.83）Ga_（0.17）As光电二极管Au欧姆接触的温度特性。对于两个退火样品，观察到比接触电阻率rho（sc）的新的温度行为，并表现出类似的“金属”，可描述的T（2.01）和T（2.19）的依赖性。透射电子显微镜（TEM）的微观界面分析表明，分别具有9 × 10（7）和2.0 × 10（8）cm（-2）密度的Au突起穿透到接触层中，可以通过充当更有效的导电通道而引起这种现象。通过制作扩展波长的In_（0.83）Ga_（0.17）As光电二极管，并由其电流-电压-温度（I-V-T）特性推导出串联电阻，证明了串联电阻主要是由金属-半导体（MS）界面的接触电阻引起的。所得结果对推广波长In_（0.83）Ga_（0.17）As光电二极管的应用具有重要意义。
The temperature-dependent electrical properties of Au Ohmic contacts of In0.83Ga0.17As photodiodes were systematically investigated in the temperature range 163-373 K. For two annealed sample, the novel temperature behavior of the specific contact resistivity rho (sc) was observed and exhibits similarity to that of 'metal,' describable by a T (2.01) and T (2.19) dependence. The microscopic interfacial analysis from transmission electron microscope (TEM) indicated that the Au protrusions penetrating into the contact layer, with a density of 9 x 10(7) and 2.0 x 10(8) cm(-2), respectively, could cause this phenomenon by acting as the more efficient conduction channels. By fabricating the extended wavelength In0.83Ga0.17As photodiode and deducing the series resistance from the current-voltage-temperature (I-V-T) characteristics, it is proved that the series resistance is mainly caused by the contact resistance of the metal-semiconductor (MS) interface. The results are very meaningful for the application of the extended wavelength In0.83Ga0.17As photodiode.