Carrier concentration dependence of band gap shift in n-type ZnO:Al films
Carrier concentration dependence of band gap shift in n-type ZnO:Al films
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DOI：
10.1063/1.2721374
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发表时间：
2007-04-15
影响因子：
3.2
通讯作者：
Zhao, B. H.
中科院分区：
文献类型：
--
作者：
Lu, J. G.;Fujita, S.;Zhao, B. H.
采用喷雾化学气相沉积和磁控溅射法制备了Al掺杂ZnO（AZO）薄膜。结合已有的理论模型，系统地研究了n型氧化锌（ZnO）带隙位移随载流子浓度的变化规律。从光学吸收光谱中评估的能隙的位移，不依赖于样品制备，它主要是与载流子浓度，所以固有的AZO。光学带隙随电子浓度的增加而增大，当n（e）= 2/3时，光学带隙随电子浓度的增加而增大
Al-doped ZnO (AZO) thin films have been prepared by mist chemical vapor deposition and magnetron sputtering. The band gap shift as a function of carrier concentration in n-type zinc oxide (ZnO) was systematically studied considering the available theoretical models. The shift in energy gap, evaluated from optical absorption spectra, did not depend on sample preparations; it was mainly related to the carrier concentrations and so intrinsic to AZO. The optical gap increased with the electron concentration approximately as n(e)(2/3) for n(e)