A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs
A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs
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DOI：
10.1088/0256-307x/30/11/117102
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发表时间：
2013-11
影响因子：
3.5
通讯作者：
Lining Zhang;Mei Jinhe;Xiangyu Zhang;Jin Tao;Yue Hu;Jin He;M. Chan
中科院分区：
文献类型：
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作者：
Lining Zhang;Mei Jinhe;Xiangyu Zhang;Jin Tao;Yue Hu;Jin He;M. Chan
比较研究了纳米线金属氧化物半导体场效应晶体管的两种典型的弹道输运模型，即Natori模型和Jimenez模型。讨论了这两种模型的局限性和适用性。然后将希门尼斯模型扩展到包含原子色散关系，并从弹道电流和量子电容两个方面与Natori模型进行了比较。研究发现，即使在非常小的纳米线尺寸下，与更复杂的Natori模型相比，Jimenez模型也可以产生类似的结果。
We comparatively study two representative ballistic transport models of nanowire metal-oxide-semiconductor field effect transistors, i.e. the Natori model and the Jimenez model. The limitations and applicability of both the models are discussed. Then the Jimenez model is extended to include atomic dispersion relations and is compared with the Natori model from the aspects of ballistic current and quantum capacitance. It is found that the Jimenez model can produce similar results compared with the more complex Natori model even at very small nanowire dimensions.