Exchange-Torque-Triggered Fast Switching of Antiferromagnetic Domains
Exchange-Torque-Triggered Fast Switching of Antiferromagnetic Domains
复制标题
交换扭矩触发的反铁磁域快速切换
DOI：
10.1103/physrevlett.128.137201
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发表时间：
2022
影响因子：
8.6
通讯作者：
Yizheng Wu
中科院分区：
文献类型：
--
作者：
Jia Xu;Jing Xia;Xixiang Zhang;Chao Zhou;Dong Shi;Haoran Chen;Tong Wu;Qian Li;Haifeng Ding;Yan Zhou;Yizheng Wu
反铁磁材料由于其高稳定性和无杂散场的特性，被认为是下一代磁存储的理想载体材料。理解反铁磁畴态的开关特性是发展反铁磁自旋电子学的关键。通过利用磁光双折射效应，我们实验证明了在单晶Fe/CoO双层膜上施加交变方波场，AFM畴的开关速率可以提高2个数量级以上。观察到的异常速度可以比具有相同振幅的恒定场所触发的速度快得多。该效应可以理解为有效抑制AFM畴壁的钉扎，由Fe磁化的反转所触发的强交换扭矩，如自旋动力学模拟所揭示的。我们的发现为利用铁磁-反铁磁异质结构设计基于反铁磁的自旋电子器件提供了新的机会。
The antiferromagnet is considered to be a promising hosting material for the next generation of magnetic storage due to its high stability and stray-field-free property. Understanding the switching properties of the antiferromagnetic (AFM) domain state is critical for developing AFM spintronics. By utilizing the magneto-optical birefringence effect, we experimentally demonstrate the switching rate of the AFM domain can be enhanced by more than 2 orders of magnitude through applying an alternating square-wave field on a single crystalline Fe/CoO bilayer. The observed extraordinary speed can be much faster than that triggered by a constant field with the same amplitude. The effect can be understood as the efficient suppression of the pinning of AFM domain walls by the strong exchange torque triggered by the reversal of the Fe magnetization, as revealed by spin dynamics simulations. Our finding opens up new opportunities to design the antiferromagnet-based spintronic devices utilizing the ferromagnet-antiferromagnet heterostructure.