Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy
Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy
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激光诱导荧光光谱法识别 SiH4 催化化学气相沉积中的 Si 和 SiH
DOI：
10.1063/1.1314330
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发表时间：
2000
影响因子：
3.2
通讯作者：
H. Matsumura
中科院分区：
文献类型：
--
作者：
Y. Nozaki;K. Kongo;Toshihiko Miyazaki;M. Kitazoe;Katsuhiko Horii;H. Umemoto;A. Masuda;H. Matsumura
在催化化学气相沉积（CVD），通常被称为热线CVD，过程中产生的自由基物种被确定通过使用激光诱导荧光技术。在可以忽略气相中碰撞过程的低压下，可以检测到基态Si原子。当催化剂温度为2300 K时，刚在催化剂（钨）表面形成的Si原子的电子温度为1320±490 K。加入0.5Pa的Ar，电子温度降到450±30 K。当SiH 4的流量和压力分别为0.5sccm和4 mPa时，在催化剂下方10 cm处Si原子的绝对密度为3±1×109 cm-3。该密度仅为母体SiH 4分子的0.3%。然而，由于Si原子的衰变速率快，因此可以得出结论，原子硅是加热催化剂表面上的主要产物之一。也可以检测到SiH自由基，但这种物质的产生速率比Si原子的产生速率低两个数量级。同时还发现，氢原子对沉积在腔壁上的非晶硅的侵蚀会产生挥发性SiH 4分子。利用激光诱导荧光技术，对催化化学气相沉积（CVD）（通常称为热线CVD）过程中产生的自由基物种进行了鉴定。在可以忽略气相中碰撞过程的低压下，可以检测到基态Si原子。当催化剂温度为2300 K时，刚在催化剂（钨）表面形成的Si原子的电子温度为1320±490 K。加入0.5Pa的Ar，电子温度降到450±30 K。当SiH 4的流量和压力分别为0.5sccm和4 mPa时，在催化剂下方10 cm处Si原子的绝对密度为3±1×109 cm-3。该密度仅为母体SiH 4分子的0.3%。然而，由于Si原子的衰变速率快，因此可以得出结论，原子硅是加热催化剂表面上的主要产物之一。SiH自由基也能被检测到，但其产生速率是磁场的两个数量级。
Radical species produced in catalytic chemical vapor deposition (CVD), often called hot-wire CVD, processes were identified by using a laser induced fluorescence technique. Ground state Si atoms could be detected at low pressures where collisional processes in the gas phase could be ignored. The electronic temperature of Si atoms just after the formation on the catalyzer (tungsten) surfaces was 1320±490 K, when the catalyzer temperature was 2300 K. By the addition of 0.5 Pa of Ar, the electronic temperature was lowered down to 450±30 K. The absolute density of Si atoms was 3±1×109 cm−3 at 10 cm below the catalyzer when the flow rate and the pressure of SiH4 were 0.5 sccm and 4 mPa, respectively. This density is just 0.3% of that of the parent SiH4 molecules. However, since the decay rate of Si atoms is fast, it can be concluded that atomic silicon is one of the major products on the heated catalyzer surfaces. SiH radicals could also be detected, but the production rate of this species is two orders of magnitude less than that of Si atoms. It was also discovered that volatile SiH4 molecules are produced by the atomic hydrogen attack on the amorphous silicon deposited on the chamber walls.Radical species produced in catalytic chemical vapor deposition (CVD), often called hot-wire CVD, processes were identified by using a laser induced fluorescence technique. Ground state Si atoms could be detected at low pressures where collisional processes in the gas phase could be ignored. The electronic temperature of Si atoms just after the formation on the catalyzer (tungsten) surfaces was 1320±490 K, when the catalyzer temperature was 2300 K. By the addition of 0.5 Pa of Ar, the electronic temperature was lowered down to 450±30 K. The absolute density of Si atoms was 3±1×109 cm−3 at 10 cm below the catalyzer when the flow rate and the pressure of SiH4 were 0.5 sccm and 4 mPa, respectively. This density is just 0.3% of that of the parent SiH4 molecules. However, since the decay rate of Si atoms is fast, it can be concluded that atomic silicon is one of the major products on the heated catalyzer surfaces. SiH radicals could also be detected, but the production rate of this species is two orders of mag...
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DOI：
--
发表时间：
2020
期刊：
影响因子：
--
作者：
○新井 駿祐;小菅 亮太;小曽根 崇;川田 匡彌
通讯作者：
川田 匡彌