A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient
A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient
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DOI：
10.1109/ted.2006.871849
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发表时间：
2006-04
影响因子：
3.1
通讯作者：
Tahui Wang;Chien-Tai Chan;Chun-Jung Tang;Ching-Wei Tsai;H. Wang;Min-hwa Chi;D. Tang
中科院分区：
文献类型：
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作者：
Tahui Wang;Chien-Tai Chan;Chun-Jung Tang;Ching-Wei Tsai;H. Wang;Min-hwa Chi;D. Tang
提出了一种正偏置温度不稳定性（PBTI）恢复瞬态技术，用于研究nmosfet中作为高k栅极介质的HfSiON的陷阱特性。大面积和小面积nmosfet都有特点。在大面积器件中，后pbti漏极电流表现为恢复瞬态，并遵循对数时间依赖性。在小面积装置中，在恢复过程中观察到来自HfSiON栅介质的单个捕获电子发射，其表现为阶梯状漏极电流随时间的演变。通过测量捕获电子发射次数对温度和栅极电压的依赖关系，研究了PBTI回收的物理机制。基于热辅助隧道的分析模型可以成功地再现测量的瞬态特性。此外，该方法还表征了HfSiON阱的密度和活化能等特性。
A positive bias temperature instability (PBTI) recovery transient technique is presented to investigate trap properties in HfSiON as high-k gate dielectric in nMOSFETs. Both large- and small-area nMOSFETs are characterized. In a large-area device, the post-PBTI drain current exhibits a recovery transient and follows logarithmic time dependence. In a small-area device, individual trapped electron emission from HfSiON gate dielectric, which is manifested by a staircase-like drain current evolution with time, is observed during recovery. By measuring the temperature and gate voltage dependence of trapped electron emission times, the physical mechanism for PBTI recovery is developed. An analytical model based on thermally assisted tunneling can successfully reproduce measured transient characteristics. In addition, HfSiON trap properties, such as trap density and activation energy, are characterized by this method.