Ge2Sb1.5Bi0.5Te5 thin film as inorganic photoresist
Ge2Sb1.5Bi0.5Te5 thin film as inorganic photoresist
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Ge2Sb1.5Bi0.5Te5薄膜作为无机光刻胶
DOI：
10.1364/ome.2.000461
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发表时间：
2012-04-01
影响因子：
2.8
通讯作者：
Chu, Maoyou
中科院分区：
文献类型：
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作者：
Xi, Hongzhu;Liu, Qian;Chu, Maoyou
一种具有良好光热效应的新型相变材料Ge₂Sb₁.₅Bi₀.₅Te₅（GSBT）已被开发用作无机光刻胶。基于该材料的掩模可以通过自制的激光直写（LDW）设备轻松制备，并且通过反应离子刻蚀技术已成功将掩模图案转移到硅衬底上。实验结果表明，硅对GSBT的最大刻蚀选择性高达524∶1，这与传统的有机光刻胶相当，并且从理论上解释了这一高比率。由于这种无机光刻胶的优点，它可能在硅基微电子领域具有应用价值。（C）2012美国光学学会
A new phase change material Ge2Sb1.5Bi0.5Te5 (GSBT) with good optothermal effect has been developed as an inorganic photoresist. Masks based on the material can be easily fabricated by home-built laser direct writing (LDW) equipment, and as a result mask patterns have been successfully transferred onto Si substrates by reactive ion etching techniques. Experimental results indicate that maximum etching selectivity of Si to GSBT reaches up to 524:1, which is comparable with the traditional organic photoresists, and the high ratio is also explained theoretically. Because of the merits of the inorganic photoresist, it might prove useful in silicon-based microelectronics (C) 2012 Optical Society of America