Ultrahigh-Gain Single SnO2 Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed
Ultrahigh-Gain Single SnO2 Microrod Photoconductor on Flexible Substrate with Fast Recovery Speed
复制标题
柔性基板上具有快速恢复速度的超高增益单 SnO2 微棒光电导体
DOI：
10.1002/adfm.201500231
复制
发表时间：
2015-06-03
影响因子：
19
通讯作者：
Shen, Dezhen
中科院分区：
文献类型：
--
作者：
Liu, Kewei;Sakurai, Makoto;Shen, Dezhen
基于宽带隙半导体的紫外光探测器由于其独特的性能和广泛的应用，在过去的二十年里引起了人们越来越多的关注。然而，实际的紫外光电探测器需要两个矛盾的性能：高的内部增益和快的恢复速度，因为高的内部增益是通过光激发载流子的长寿命来实现的，而快的恢复需要它们的快衰减。它们在宽带隙半导体中的缓慢衰减被称为持续光电导（PPC）问题，并阻碍了应用。在本文中，一个很好的解决方案，上述矛盾的问题是在一个单一的SnO2微棒光电导体，它显示出高的光电导增益（约1.5 × 10（9））和快速的恢复速度（1 d），这是由一个新的复位过程诱导：弯曲和矫直的微棒，随后施加电压脉冲。这一结果表明SnO2微米棒在高性能紫外光探测器件中具有潜在的应用前景。
Owing to the special properties and wide applications, UV photodetectors based on wide-band-gap semiconductors have drawn an increasing interest during the last two decades. However, practical UV photodetectors are required two contradictory performances: high internal gain and fast recovery speed, because high internal gain is achieved by long life time of photoexcited carriers and fast recovery needs their fast decay. Their slow decay in wide-band-gap semiconductors has been known as a persistent photoconductivity (PPC) problem and hinders applications. In this paper, a good solution to the above contradictory problem is demonstrated on a single SnO2 microrod photoconductor, which shows both high photoconductive gain (approximate to 1.5 x 10(9)) and quick recovery speed (1 d), which is induced by a novel reset process: bending and straightening the microrod and subsequently applying a voltage pulse. This result suggests that SnO2 microrods have potential applications in high-performance UV photodetecting devices.