Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications
Molybdenum thin films fabricated by rf and dc sputtering for Cu(In,Ga)Se2 solar cell applications
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通过射频和直流溅射制备用于 Cu(In,Ga)Se2 太阳能电池应用的钼薄膜
DOI：
10.3788/col201614.043101
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发表时间：
2016-04
影响因子：
3.5
通讯作者：
F. Huang
中科院分区：
文献类型：
--
作者：
X. Zhu;M. Qin;D. Wan;F. Huang
钼（Mo）薄膜，最常用的Cu（In，Ga）Se2（CIGS）太阳能电池的电背接触，在相同的系统中通过射频和直流磁控溅射沉积，以研究两种溅射技术的差异和生长机制。结果表明，虽然不同的沉积工艺通常会得到不同特性的存款薄膜，但在各自合适的沉积条件下，可以得到结构和物理特性相似的Mo薄膜。进一步优化了钠钙玻璃上的高粘附性和导电性Mo膜，并且所制造的太阳能电池在没有抗反射层的情况下达到高达9.4%和9.1%的效率。
Molybdenum (Mo) thin films, most commonly used as electrical back contacts in Cu(In,Ga)Se2 (CIGS) solar cells, are deposited by rf and dc magnetron sputtering in identical systems to study the discrepancy and growth mechanisms of the two sputtering techniques. The results reveal that though different techniques generally deposit films with different characteristic properties, Mo films with similar structural and physical properties can be obtained at respective suitable deposition conditions. Highly adhesive and conductive Mo films on soda lime glass are further optimized, and the as-fabricated solar cells reach efficiencies as high as 9.4% and 9.1% without an antireflective layer.