Nanosecond pulsed laser induced self-organized nano-dots patterns on GaSb surface
Nanosecond pulsed laser induced self-organized nano-dots patterns on GaSb surface
复制标题
纳秒脉冲激光在 GaSb 表面诱导自组织纳米点图案
DOI：
10.1016/j.apsusc.2014.03.093
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发表时间：
2014
影响因子：
6.7
通讯作者：
T
中科院分区：
文献类型：
--
作者：
Yoshida;Y; Oosawa;K; Wajima;J; Watanabe;S; Matsuo;Y; Kato;T
报道了一种利用波长为532 nm的纳秒脉冲激光在镓(GaSb)上形成二维(2D)纳米点(ND)图案的技术。图案的形成是由于激光能量沉积下的干涉和自组织，导致了NDS在局部区域的生长。NDS通过能量沉积在图案中生长和缩小。在平均激光能量密度为35mJ/cm−2的激光照射下，GaSb表面形成了大小不同的NDS。随着激光脉冲的增加，大的NDS的平均直径从160 nm增大到200 nm，而小的NDS的平均直径从75 nm缩小到30 nm。在图案中生长NDS所需的临界网点尺寸约为107 nm。纳秒脉冲激光辐照可以控制空气中GaSb表面的自组织尺寸随激光脉冲的变化。
We report a technique for formation of two-dimensional (2D) nanodot (ND) patterns on gaillium antimoide (GaSb) using a nanosecond pulsed laser irradiation with 532 nm wavelength. The patterns have formed because of the interference and the self-organization under energy deposition of the laser irradiation, which induced the growth of NDs on the local area. The NDs are grown and shrunken in the pattern by energy depositions. In the laser irradiation with average laser energy density of 35 mJ cm−2, large and small NDs are formed on GaSb surface. The large NDs have grown average diameter from 160 to 200 nm with increase of laser pulses, and the small NDs have shrunken average diameter from 75 to 30 nm. The critical dot size is required about 107 nm for growth of the NDs in the patterns. Nanosecond pulsed laser irradiation can control the self-organized ND size on GaSb in air as a function of the laser pulses.