Stimulated emission on two-dimensional distributed feedback scheme in triangular GaN nanocolumn arrays
Stimulated emission on two-dimensional distributed feedback scheme in triangular GaN nanocolumn arrays
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DOI：
10.1049/el.2010.0168
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发表时间：
2010-04-29
影响因子：
1.1
通讯作者：
Ema, K.
中科院分区：
文献类型：
--
作者：
Kouno, T.;Kishino, K.;Ema, K.
通过射频等离子体辅助分子束外延的钛掩模选择性区域生长，制备了在每个纳米柱顶部区域集成了InGaN/GaN多量子阱的三角形氮化镓纳米柱阵列。在纳米柱阵列中，在低光激发下观察到在特定波长479.4 nm处光强有显著增强，然后在高光激发下，在阈值激发密度为400 kW/cm²时，在接近特定波长（476.3 nm）处出现了光泵浦受激发射。通过二维时域有限差分和二维平面波展开方法对纳米柱阵列的光响应进行了数值分析，证明受激发射发生在二维分布反馈机制中。
Triangular GaN nanocolumn arrays, in which InGaN/GaN multiple quantum wells were integrated at the top region of each nanocolumn, were grown by Ti-mask selective-area growth of RF-plasma-assisted molecular beam epitaxy. In the nanocolumn arrays, a strong enhancement in light intensity at the specific wavelength of 479.4 nm was observed under low optical excitation, and then optically pumped stimulated emission occurred at near the specific wavelength (476.3 nm) under high optical excitation with a threshold excitation density of 400 kW/cm(2). The light response of the nanocolumn array was numerically analysed by two-dimensional (2D) finite-difference time-domain and 2D plane-wave expansion methods, proving that the stimulated emission occurred in the 2D distributed feedback scheme.