Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium
Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium
复制标题
空位杂质复合物以及 Ga 和 Sn 在本征和 p 掺杂锗中的扩散
DOI：
--
复制
发表时间：
2007
期刊：
影响因子：
--
通讯作者：
J. Räisänen
中科院分区：
文献类型：
--
作者：
I. Riihimäki;A. Virtanen;S. Rinta;P. Pusa;J. Räisänen
通过p型（Ga）掺杂对Ga和Sn扩散的影响，研究了锗中移动空位杂质配合物的电荷态。锡的扩散随着掺杂浓度的增加而明显减慢，表明扩散主要由带负电荷的空位锡配合物主导。镓的扩散几乎不受掺杂的影响，这表明扩散主要是由与孤立的带负电荷的镓离子具有相同电荷状态的空位-镓配合物主导。锗中V族元素的扩散率明显比III族和IV族元素高两个数量级，这可以用本研究结果很好地解释。
The charge state of mobile vacancy-impurity complexes in germanium was studied via the effect of p-type (Ga) doping on Ga and Sn diffusions. Tin diffusion retards significantly as a function of doping concentration suggesting diffusion dominated by negatively charged vacancy-Sn complexes. Gallium diffusion is practically unaffected by doping, suggesting diffusion dominated by vacancy-Ga complexes having the same charge state as isolated, negatively charged Ga ions. The evident two orders of magnitude higher diffusivity of group V elements in germanium than of group III and IV elements can be well explicated by means of the present findings.