Electron scattering in AlGaN/GaN structures
Electron scattering in AlGaN/GaN structures
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AlGaN/GaN 结构中的电子散射
DOI：
10.1063/1.1655704
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发表时间：
2003
影响因子：
4
通讯作者：
H. Stormer
中科院分区：
文献类型：
--
作者：
S. Syed;M. Manfra;Y. Wang;Richard J. Molnar;H. Stormer
我们提供了AlGaN/GaN系统中一系列高迁移率二维电子气的迁移率寿命τt、量子寿命τq和回旋共振寿命τCR的数据，覆盖密度范围为1至4.5×1012 cm−2。 我们观察到τq和τCR之间有很大的差异（τq <$τCR/6），并将其解释为只有百分之几的密度波动的结果。因此，只有τ CR-而不是τ q-是这些样品中电子散射事件之间的时间的可靠度量。在这一系列样品中，比值τt/τCR随着密度的增加而增加，但在此密度范围内的散射主要保持在大角度散射状态。
We present data on mobility lifetime τt, quantum lifetime τq, and cyclotron resonance lifetime τCR, of a sequence of high-mobility two-dimensional electron gases in the AlGaN/GaN system, covering a density range of 1 to 4.5×1012 cm−2. We observe a large discrepancy between τq and τCR(τq∼τCR/6), and explain it as the result of density fluctuations of only a few percent. Therefore, only τCR—and not τq—is a reliable measure of the time between electron-scattering events in these specimens. The ratio τt/τCR increases with increasing density in this series of samples, but scattering over this density range remains predominantly in the large-angle scattering regime.