Electrical and magnetic properties of a single crystal UCu2Si2
Electrical and magnetic properties of a single crystal UCu2Si2
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DOI：
10.1143/jpsj.74.1552
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发表时间：
2005-05-01
影响因子：
1.7
通讯作者：
Onuki, Y
中科院分区：
文献类型：
--
作者：
Matsuda, TD;Haga, Y;Onuki, Y
采用Sn-flux法成功地生长出了具有四方结构的高质量UCu2Si2单晶，并对其电阻率、磁化率、磁化率和比热进行了测量。发现UCu2Si2在T-N = 106K以下呈反铁磁有序，在T-C = 100k时呈连续铁磁有序。磁性能具有高度的各向异性，反映了晶体结构。在反铁磁相和铁磁相中，磁化的易轴为[001]方向（c轴），而磁化的硬轴为[100]方向（a轴）。反铁磁相的磁化曲线表明，在1 kOe左右的低场强下，出现了明显的偏磁转变，在T-C = 100 K以下变为铁磁磁化曲线。在2 K时确定饱和力矩为1.75 μ (B)/U。电子比热系数也确定为20 mJ/(K(2)mol)。
We have succeeded in growing a high-quality single crystal of UCu2Si2 with the tetragonal structure by the Sn-flux method and measured the electrical resistivity, magnetic susceptibility, magnetization and specific heat. UCu2Si2 is found to order anti ferromagnetically below T-N = 106K, and follows a successive ferromagnetic ordering at T-C = 100 K. The magnetic properties are highly anisotropic, reflecting the crystal structure. An easy-axis of magnetization is found to be the [001] direction (c-axis) both in the antiferromagnetic and ferromagnetic phases, while the [100] direction (a-axis) corresponds to the hard-axis in magnetization. The magnetization curve in the antiferromagnetic phase indicates a clear metamagnetic transition at a low field of about 1 kOe and changes into a ferromagnetic magnetization curve below T-C = 100 K. The saturation moment is determined as 1.75 mu(B)/U at 2 K. The electronic specific heat coefficient is also determined as 20 mJ/(K(2.)mol).