Electrical conductivity below 3 K of slightly reduced oxygen-deficient rutile TiO2-x.
Electrical conductivity below 3 K of slightly reduced oxygen-deficient rutile TiO2-x.
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DOI：
10.1103/physrevb.49.7251
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发表时间：
1994-03
期刊：
影响因子：
--
通讯作者：
Hasiguti;Yagi
中科院分区：
文献类型：
--
作者：
Hasiguti;Yagi
通过对氧缺陷Od在3.7× 1018/cm 3 ~ 5.5× 1019/cm 3之间的微还原金红石单晶在3 K以下的电阻率和霍尔系数的测量，得出如下结论：该单晶的导电是通过缺陷级置换导电机制进行的，其中包括Ti间隙施主。在3.7× 1018/cm 3≤ Od ≤ 2× 1019/cm 3范围内，电阻率随Od的增大而减小;在2× 1019/cm 3≤ Od ≤ 5.5× 1019/cm 3范围内，电阻率随Od的增大而增大。Od值在8× 1018/cm 3 ~ 2× 1019/cm 3之间，对应于所谓的杂质（缺陷）导电的中间浓度范围，但由于缺陷结构的变化，即在较高氧缺陷下形成平面缺陷和Ti间隙施主的聚集，没有发生向金属型导电的转变。
From electrical resistivity and Hall coefficient measurements below 3 K on slightly reduced, semiconductive rutile single crystals with oxygen deficiencies O d between 3.7× 10 18/cm 3 and 5.5× 10 19/cm 3, it is concluded that the electrical conduction takes place by means of a defect-level permutation conduction mechanism involving Ti interstitial donors. In the range of 3.7× 10 18/cm 3≤ O d≤ 2× 10 19/cm 3 the electrical resistivity decreases with increasing O d, while in the range of 2× 10 19/cm 3≤ O d≤ 5.5× 10 19/cm 3 it increases with increasing O d. Values of O d between 8× 10 18/cm 3 and 2× 10 19/cm 3 correspond to the so-called intermediate concentration range of the impurity (defect) conduction, but the transition to metallic-type conduction does not occur because of a change in the defect structures, ie, the formation of planar defects and the clustering of Ti interstitial donors at higher oxygen deficiencies.