Codes Correcting Asymmetric/Unidirectional Errors along with Bidirectional Errors of Small Magnitude
Codes Correcting Asymmetric/Unidirectional Errors along with Bidirectional Errors of Small Magnitude
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DOI：
10.1109/prdc.2014.28
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发表时间：
2014-11
期刊：
影响因子：
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通讯作者：
Shohei Kotaki;M. Kitakami
中科院分区：
文献类型：
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作者：
Shohei Kotaki;M. Kitakami
多电平单元NAND闪存中的主要误差源将阈值电压电平移位到正值或负值，因此误差由非二进制单向通道建模。然而，当正误差和负误差具有相等的意义时，也可以引起双向误差。与单向情况相比，双向误差的误差幅度被认为是小的。在这种对应关系中，提出了新的纠错码，其校正有限幅度的非对称/单向误差沿着相对小幅度的双向误差。与传统的对称纠错码相比，它们可以用于降低编码和解码复杂度。
Dominant error sources in multi-level cell NAND Flash memories shift threshold voltage levels to either positive or negative values, thus errors are modeled by nonbinary unidirectional channels. However, bidirectional errors can also be caused when positive and negative errors have equivalent significance. Compared to unidirectional cases, error magnitude of bidirectional errors are considered to be small. In this correspondence, novel error correcting codes which correct limited magnitude asymmetric/unidirectional errors along with bidirectional errors of relatively small magnitude are presented. They can be used to reduce encoding and decoding complexity compared to conventional symmetric error correcting codes.