High figure of merit of Sb2.18Te3 achieved via modulating stoichiometric ratio with chemical method
High figure of merit of Sb2.18Te3 achieved via modulating stoichiometric ratio with chemical method
复制标题
化学方法调节化学计量比实现Sb2.18Te3的高品质因数
DOI：
10.1007/s10854-020-04834-1
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Shi Jing
中科院分区：
文献类型：
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作者：
Zhao Yiwei;Wang Haiying;Ma Hongyu;Yu Xiang;Liu Yong;Zhang Xingzhong;Xiong Rui;Shi Jing
掺杂一种或多种元素被广泛用于通过调节热电材料的电学和热学性质来调节热电材料的性能。本文制备了一系列p型Sb 2（1+ x）Te 3纳米片复合材料，并对其进行了测试。Sb 2（1+ x）Te 3中过量Sb会导致高载流子密度，从而导致比纯Sb 2 Te 3大得多的电导率。Sb2.18Te3基复合材料在523 K时的最高ZT值为1.22，在323 ~ 523 K范围内的平均ZT值均大于1，这是掺杂Sb 2 Te 3基复合材料在中低温区较好的ZT值。在Sb 2 Te 3纳米片中自掺杂元素Sb是一种有效的策略，对提高功率因数和保持低热导率有重要影响。采用回流化学法合成了Sb 2（1+ x）Te 3纳米复合材料.与固溶体熔融法、高能球磨法、溶剂热反应法等制备纳米材料的方法相比，回流化学反应法不仅是一种简便、省时、绿色的制备纳米材料的方法，而且可以大规模生产。
Doping an element or more is widely used to regulate thermoelectric materials performance through adjusting electrical and thermal properties. In this work, a series of p-type Sb 2(1+ x ) Te 3 nanoflake composites are fabricated and tested. Excessive Sb in Sb 2(1+ x ) Te 3 causes high carrier density, which results in much larger electrical conductivity compared with that of pure Sb 2 Te 3 . The highest merit ZT of the Sb 2.18 Te 3 composite reaches to 1.22 at 523 K, and the average ZT value in Sb 2.18 Te 3 sample is above 1 obtained from 323 to 523 K, which is a decent ZT value at low–mid temperature zone for doped Sb 2 Te 3 -based composites. Self-doping element Sb into Sb 2 Te 3 nanoflakes is an effective strategy that has a significant influence on improving power factor and keeping low thermal conductivity. Sb 2(1+ x ) Te 3 nanostructure composites are synthesized by reflux chemical method. Comparing with other methods involving solid solution melting, high-energy ball milling and solvothermal reaction, reflux chemical reaction method is not only a more facile, timesaving and green way to produce nanoscale materials but also can be applied to mass production.