Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates
Orientation alignment of epitaxial LiCoO2 thin films on vicinal SrTiO3 (100) substrates
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邻位 SrTiO3 (100) 衬底上外延 LiCoO2 薄膜的取向排列
DOI：
10.1016/j.jpowsour.2016.06.015
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发表时间：
2016
影响因子：
9.2
通讯作者：
K. Takada
中科院分区：
文献类型：
--
作者：
K. Nishio;T. Ohnishi;K. Mitsuishi;N. Ohta;K. Watanabe;K. Takada
LiCoO2在SrTiO3（100）衬底上以（104）晶向外延生长。由于LiCoO2薄膜的生长轴与SrTiO3的四个等效轴平行，<111>因此在SrTiO3（100）衬底上的LiCoO2薄膜具有四畴结构。通过引入切角，打破了SrTiO 3衬底四轴之间的等效性<111>，诱导了沿切角下降方向的特定取向的择优生长。增大偏切角和降低沉积速率有利于择优生长，因为它们有利于阶梯流生长模式，最终使畴内的轴完全对准<111>SrTiO 3衬底的一个方向。LiCoO2膜在0.01 C的低放电速率下提供90 mAh g− 1的放电容量，并且即使在100 C的高放电速率下也保持25%的容量。
LiCoO2is epitaxially grown on SrTiO3(100) substrates with (104) orientation. Because the LiCoO2film is grown with itsc-axis parallel to four equivalent <111> axes of the SrTiO3, the (104)-oriented film exhibits four-domain structure on the SrTiO3(100) substrate. Introducing off-cut angle to the substrate surface breaks the equivalency between the four <111> axes of the SrTiO3substrate to induce preferential growth of specific orientation with thec-axis in a descending direction of off-cut surface. Increasing off-cut angle and lowering deposition rate promote the preferential growth, because they facilitate step-flow growth mode, and finally align thec-axes in the domains completely into one <111> direction of the SrTiO3substrate. The LiCoO2film delivers a discharge capacity of 90 mAh g−1at a low discharge rate of 0.01 C, and 25% of capacity is kept even at a high rate of discharge with 100 C.