On DRAM Rowhammer and the Physics of Insecurity
On DRAM Rowhammer and the Physics of Insecurity
复制标题
论 DRAM Rowhammer 和不安全的物理原理
DOI：
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发表时间：
2021
影响因子：
3.1
通讯作者：
Dafna Beery
中科院分区：
文献类型：
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作者：
A. Walker;Sungkwon Lee;Dafna Beery
动态随机存取存储器（DRAM）干扰被称为rowhammer (RH)，已经成为全球计算系统安全的主要问题。一些研究集中在从开关电池选择晶体管的电子注入和附近存储节点的捕获上，这是产生这种效应的主要机制。本文首次从电子注入和捕获以及电容串扰的角度深入探讨了相对湿度。文献中缺乏硅级的全面研究可归因于其在行业内的敏感性，并突出了DRAM缩放的难度。因此，这篇综述文章形成了一个广泛的基础，以扩展对这种危险干扰机制的理解，从而为未来DRAM技术一劳永逸地解决RH的能力提供了一个知情的观点。
The dynamic random access memory (DRAM) disturb known as rowhammer (RH) has come to dominate the insecurity of computing systems worldwide. Several studies have concentrated on electron injection from a switching cell select transistor and capture by nearby storage node junctions as being the main mechanism for the effect. This article for the first time looks in-depth at RH from the point of view of both electron injection and capture, and capacitive crosstalk. The absence of such comprehensive studies at the silicon level in the literature can be attributed to its sensitive nature within the industry and highlights the difficulty of DRAM scaling. This review article, therefore, forms a broad foundation to extend understanding of this dangerous disturb mechanism and in so doing provides an informed view on the ability of future DRAM technologies to solve RH once and for all.