MEASUREMENT OF I-V CURVES OF SILICON-ON-INSULATOR (SOI) MOSFETS WITHOUT SELF-HEATING
MEASUREMENT OF I-V CURVES OF SILICON-ON-INSULATOR (SOI) MOSFETS WITHOUT SELF-HEATING
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DOI：
10.1109/55.372496
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发表时间：
1995-04-01
影响因子：
4.9
通讯作者：
SUN, JYC
中科院分区：
文献类型：
--
作者：
JENKINS, KA;SUN, JYC
介绍了一种测量SOI MOSFET输出(I-D-V-D)特性的新方法，该方法采用低重复频率的短脉冲和反向瞬变加载线结构。该技术通过测量0.25微米的体积层和5 nm栅氧化层的SOI MOSFET得到验证。文中还说明了该方法在提取器件温度随直流功率的变化中的应用。
A new method for measuring the output (I-D-V-D) characteristics of SOI MOSFET's without self-heating is described, The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 mu m bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of dc power is also illustrated.