Carbon annealed HPHT-hexagonal boron nitride: Exploring defect levels using 2D materials combined through van der Waals interface
Carbon annealed HPHT-hexagonal boron nitride: Exploring defect levels using 2D materials combined through van der Waals interface
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DOI：
10.1016/j.carbon.2020.05.032
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发表时间：
2020-05
期刊：
影响因子：
10.9
通讯作者：
Momoko Onodera;M. Isayama;T. Taniguchi;Kenji Watanabe;S. Masubuchi;R. Moriya;Taishi Haga;Y. Fujimo
中科院分区：
文献类型：
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作者：
Momoko Onodera;M. Isayama;T. Taniguchi;Kenji Watanabe;S. Masubuchi;R. Moriya;Taishi Haga;Y. Fujimo
六方氮化硼（h-BN）是一种层状材料，由于其迷人的性能而在各个领域引起人们的兴趣。我们提出了一个多链分析的碳缺陷的h-BN使用有意的碳（C）掺杂的h-BN晶体。采用碳退火法在高温高压条件下合成的h-BN晶体中引入碳缺陷。我们采用了一种创新的方法来探索我们的C掺杂的h-BN的杂质状态，通过组装成货车德瓦尔斯异质结构与其他二维材料。我们将石墨烯作为探针材料，在掺杂C的h-BN上的石墨烯的狄拉克点上方发现了一个受主态，该受主态引起了朗道扇形图的异常弯曲。此外，我们采用二硫化钨（WS 2）作为另一种探针材料，并评估了C掺杂的h-BN对WS 2单分子膜的发射光谱的影响。我们的工作揭示了h-BN中碳杂质的性质，也揭示了它们对相邻2D材料的影响。
Hexagonal boron nitride (h-BN) is a layered material that is generating interest in various fields owing to its fascinating properties. We present a multi-stranded analysis of carbon defects in h-BN using intentionally carbon (C)-doped h-BN crystals. Carbon defects were introduced into h-BN crystals synthesized under high-pressure and high-temperature (HPHT) conditions by a process of carbon annealing. We employ an innovative approach to explore impurity states in our C-doped h-BN by assembling it into van der Waals heterostructures with other 2D materials. Attaching graphene as a probe material to determine the impurity states in the h-BN bandgap, we locate an acceptor state above the Dirac point of graphene on C-doped h-BN, which causes anomalous bending in the Landau fan diagram. Furthermore, we adopt tungsten disulfide (WS2) as another probe material and assess the influence of C-doped h-BN on the emission spectrum of the WS2monolayers. Our work reveals the nature of the carbon impurities in h-BN and also uncovers their effects on adjacent 2D materials.