Light sensors and opto-logic gates based on organic electrochemical transistors
Light sensors and opto-logic gates based on organic electrochemical transistors
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DOI：
10.1039/c7mh00818j
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发表时间：
2018-01-01
影响因子：
13.3
通讯作者：
Winther-Jensen, Bjorn
中科院分区：
文献类型：
--
作者：
Kolodziejczyk, Bartlomiej;Ng, Chun Hin;Winther-Jensen, Bjorn
首次研究了基于聚噻吩和PEDOT：PSS的有机电化学晶体管（OECTs）的光敏特性。已经发现，开发的OECT的最大跨导转移到更高的栅极电压与光照射的聚噻吩栅电极的增加。为OECT选择的这种栅极材料在光增强氧还原反应（ORR）中起重要作用，该光增强氧还原反应随后负责光照射时沟道材料的掺杂/去掺杂，从而使OECT成为有效的光传感器件。此外，这些器件的连接允许创建有机光逻辑门。这是第一个低电压有机光电接口，有可能在现代电子学和光子学中找到应用。开发过程包括几何优化和沟道和栅极材料的优化。
The light-sensitive properties of organic electrochemical transistors (OECTs) based on polythiophene and PEDOT:PSS have been studied for the first time. It has been found that the maximum trans-conductance of a developed OECT shifts to higher gate voltages with the increase of light irradiation at the polythiophene gate electrode. This gatematerial chosen for the OECT plays an important role in the light-enhanced oxygen reduction reaction (ORR), which is subsequently responsible for the doping/de-doping of the channel material upon light illumination, thus making the OECT an efficient light sensing device. Additionally, the connection of these devices allowed the creation of organic opto-logic gates. This very first low voltage organic optical-to-electronic interface can potentially find applications in modern electronics and photonics. The development process includes geometry optimization and optimization of the channel and gate materials.