Ge on Si p-i-n photodiodes operating at 10 Gbit/s
Ge on Si p-i-n photodiodes operating at 10 Gbit/s
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DOI：
10.1063/1.2182110
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发表时间：
2006-03-06
影响因子：
4
通讯作者：
Kimerling, LC
中科院分区：
文献类型：
--
作者：
Colace, L;Balbi, M;Kimerling, LC
我们报告的快速p-i-n光电探测器工作在近红外和实现在硅上的纯锗。二极管是在600摄氏度下通过化学气相沉积制造的，不会影响晶体质量，并允许与标准硅工艺集成。我们证明在1.3和1.55 μ m，分别为0.4和0.2 A/W的响应度，以及在10 Gbit/s的操作。(c)2006年，美国物理学会。
We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics.