Bias‐temperature stress on metal‐oxide‐semiconductor structures as compared to ionizing irradiation and tunnel injection
Bias‐temperature stress on metal‐oxide‐semiconductor structures as compared to ionizing irradiation and tunnel injection
复制标题
与电离辐射和隧道注入相比，金属氧化物半导体结构的偏温应力
DOI：
10.1063/1.334196
复制
发表时间：
1984
影响因子：
3.2
通讯作者：
W. Fahrner
中科院分区：
文献类型：
--
作者：
G. Haller;M. Knoll;D. Bräunig;F. Wulf;W. Fahrner
本文介绍了金属氧化物半导体电容器在偏压温度（BT）应力、电离辐照和隧道注入实验中引起的带隙电压ΔVMG和表面态密度Dit的变化。通过辐照实验和隧道注入实验，研究了三种应力过程中材料退化机理的相互关系。在n型和p型样本上施加正和负磁场（1-5 MV/cm）进行BT应力。应力温度为100、150和200 °C;最大老化时间为30 h。在BT应力之后，n型和p型样品分别表现出中间间隙电压VMG和界面态密度Dit的相同劣化。负BT胁迫下的BVMG和Dit的增加显著大于正BT胁迫的情况。提出了一个描述负BT应力下VMG和Dit变化的解析表达式。结果表明，在应激切换后，VMG和Dit均发生了显著变化。
This paper presents the change of the midgap voltage ΔVMG and the surface state density Dit caused by bias temperature (BT) stress, ionizing irradiation, and tunnel injection experiments on metal‐oxide‐semiconductor capacitors. The irradiation tests and the tunnel injection experiments are carried out to find correlations of the degradation mechanisms among the three stress procedures. The BT stress is performed on n‐ and p‐type samples with applied positive and negative fields (1–5 MV/cm). The stress temperatures are 100, 150, and 200 °C; the maximum aging time is 30 h. After BT stress, n‐ and p‐type samples exhibit the same degradations of the midgap voltage VMG and of the interface state density Dit, respectively. The increase of ‖VMG‖ and Dit for negative BT stress is significantly larger than in the case of positive BT stress. An analytical expression which describes the changes of VMG and Dit for negative BT stress is developed. Drastic changes of VMG and Dit are observed after switching the stress ...