Deterministic emitter-cavity coupling using a single-site controlled quantum dot
Deterministic emitter-cavity coupling using a single-site controlled quantum dot
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DOI：
10.1103/physrevb.82.033301
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发表时间：
2010-07-12
影响因子：
3.7
通讯作者：
Williams, Robin
中科院分区：
文献类型：
--
作者：
Dalacu, Dan;Mnaymneh, Khaled;Williams, Robin
选择性外延用于确定性地控制单个量子点的成核位置。在量子点位置制作了一个光子晶体腔，用于一个真正的单量子点腔系统，通过设计，该系统不包含背景发射器。在固定温度下的腔调谐被用来测量点腔耦合在一个大的（>15 meV）失谐范围内使用非共振激发。低激发光谱建模使用主方程模型的基础上非相干激发。我们发现，纯声子退相单独不占所观察到的非共振腔发射和一个额外的腔馈电机制，与声子辅助的点腔耦合一致，必须包括再现实验光谱。
Site-selective epitaxy is used to deterministically control the nucleation site of a single quantum dot. A photonic crystal cavity is fabricated at the dot site for a true single quantum dot-cavity system which, by design, contains no background emitters. Cavity tuning at fixed temperature is used to measure the dot-cavity coupling over a large (>15 meV) detuning range using nonresonant excitation. The low-excitation spectra are modeled using a master equation model based on incoherent excitation. We find that pure phonon dephasing alone does not account for the observed nonresonant cavity emission and an additional cavity feeding mechanism, consistent with phonon-assisted dot-cavity coupling, must be included to reproduce the experimental spectra.