Effect of Fluorination on Nano-Sized π-Electron Systems
Effect of Fluorination on Nano-Sized π-Electron Systems
复制标题
氟化对纳米π电子系统的影响
DOI：
10.1143/jpsj.70.175
复制
发表时间：
2001
影响因子：
1.7
通讯作者：
M. Endo
中科院分区：
文献类型：
--
作者：
K. Takai;H. Sato;T. Enoki;Naohiko Yoshida;F. Okino;H. Touhara;M. Endo
研究了网络纳米石墨的电子结构与氟引入的 s p 3 缺陷对纳米级 π 电子系统的影响。在低氟浓度区域，由于引入的s p 3 缺陷导致π共轭体系收缩，从而降低了轨道抗磁性并改变了纳米石墨域之间的电子跳跃过程，并且具有局域自旋的边缘继承非键合π电子受到氟原子对边缘碳位点的攻击的严重影响，这赋予了纳米级π电子体系独特的特征。在中间氟浓度区域，由于内部碳位点的π共轭体系的局部破坏而产生悬空键自旋，从而增强了自旋密度。 ESR 光谱中线宽的超精细展宽和自旋晶格弛豫率的降低表明，与边缘继承自旋相比，氟诱导的局部自旋具有孤立的性质。
The electronic structure of networked nano-graphites is investigated in relation to the effects of fluorine-introduced s p 3 -defects on the nano-sized π-electron system. In the low fluorine concentration region, the shrinkage of the π-conjugated system due to introduced s p 3 -defects reduces the orbital diamagnetism and modifies the electron hopping process between nano-graphite domains, and the edge-inherited non-bonding π-electrons having localized spins, which give a unique feature to nano-sized π-electron system, are seriously affected by the attack of fluorine atoms to edge carbon sites. In the intermediate fluorine concentration region, the spin density is enhanced by dangling bond spins generated by the local destruction of the π-conjugated system at interior carbon sites. The hyperfine-broadening of the linewidth and the reduced spin-lattice relaxation rate in ESR spectra suggest the isolated nature of the fluorine-induced localized spins in contrast to the edge-inherited spins.