Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric
Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric
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DOI：
10.1109/led.2020.3013069
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发表时间：
2020-07
影响因子：
4.9
通讯作者：
Xinyuan Zhao;Jingping Xu;Lu Liu;Z. Li
中科院分区：
文献类型：
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作者：
Xinyuan Zhao;Jingping Xu;Lu Liu;Z. Li
研究了NH3等离子体处理HfO 2栅介质对顶栅MoS 2场效应晶体管电特性的影响。实验结果表明，NH3等离子体处理HfO 2可以有效地消除HfO 2中的氧空位，减少氧化层的正电荷，从而降低HfO 2顶栅介质生长后关态电流的增加.用经NH3等离子体处理的HfO 2作为栅介质制备的TG MoS 2 FET具有优良的电学性能：开关比为2.1 × 107，载流子迁移率为78~87 cm ~ 2/Vs，亚阈值摆幅为72 mV/dec，接近理想值。因此，经NH3等离子体处理的HfO 2作为栅介质对制备高性能的TG MoS 2 FET是非常有利的。
The effects of NH3-plasma treating HfO2 gate dielectric on electrical characteristics of top-gate (TG) MoS2 FETs are investigated. The experimental results show that the increase of off-state current after growing HfO2 top-gate dielectric can be considerably decreased by NH3-plasma treating HfO2, because the N incorporation from the NH3-plasma treatment can effectively eliminate the oxygen vacancies and reduce the positive oxide charges in HfO2. The fabricated TG MoS2 FETs with the NH3-plasma treated HfO2 as gate dielectric achieve excellent electrical performances: high on–off ratio of $2.1 \times 107$ , high carrier mobility of 78~87 cm2/Vs and near-ideal subthreshold swing of 72mV/dec. Therefore, the NH3-plasma treated HfO2 as gate dielectric is highly beneficial for fabricating highperformance TG MoS2 FETs.