Anderson localization in carbon nanotubes: defect density and temperature effects.
Anderson localization in carbon nanotubes: defect density and temperature effects.
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DOI：
10.1103/physrevlett.95.266801
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发表时间：
2005-11
影响因子：
8.6
通讯作者：
B. Biel;F. García-Vidal;Á. Rubio;F. Flores
中科院分区：
文献类型：
--
作者：
B. Biel;F. García-Vidal;Á. Rubio;F. Flores
利用第一性原理分析了辐照缺陷和温度对单壁（10,10）碳纳米管导电性能的影响。我们发现缺口强烈地改变了微分电导的能量依赖性，也将贡献通道的数量从两个（理想）减少到一个。少量的缺口（5-9）带来了很强的安德森局域化效应，并且电阻作为缺陷数量的函数的曲线似乎是通用的。结果还表明，大约15-65 K的低温足以平滑电导的波动，而不会破坏电阻率作为管长函数的指数依赖关系。
The role of irradiation induced defects and temperature in the conducting properties of single-walled (10, 10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that divacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of divacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, about 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.