Optical signatures of intrinsic electron localization in amorphous Si02
Optical signatures of intrinsic electron localization in amorphous Si02
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非晶 SiO2 中本征电子局域化的光学特征
DOI：
10.1088/0953-8984/27/26/265501
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
K. Tanimura and A L. Shluger
中科院分区：
文献类型：
--
作者：
A-M. E1-Sayed1;K. Tanimura and A L. Shluger
我们测量和分析的光学吸收光谱的三个石英玻璃样品照射1兆电子在80 K，自陷空穴是稳定的，并使用从头计算证明，这些光谱包含的签名的固有电子陷阱创建的对应物的孔。特别是，我们认为，在3.7，4.7，和6.4 eV的光吸收带峰值属于强本地化的电子被困在前体网站在非晶结构的特点是应变Si-O键和O-Si-O角大于132。这些结果对于我们理解石英玻璃和其他硅酸盐的性质以及电子和光学器件的可靠性和发光测年都很重要。
We measure and analyse the optical absorption spectra of three silica glass samples irradiated with 1 MeV electrons at 80 K, where self-trapped holes are stable, and use ab initio calculations to demonstrate that these spectra contain a signature of intrinsic electron traps created as counterparts to the holes. In particular, we argue that optical absorption bands peaking at 3.7, 4.7, and 6.4 eV belong to strongly localised electrons trapped at precursor sites in amorphous structure characterized by strained Si–O bonds and O–Si–O angles greater than 132. These results are important for our understanding of the properties of silica glass and other silicates as well as the reliability of electronic and optical devices and for luminescence dating.