Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study
Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study
复制标题
DOI：
10.1021/acs.jpcc.8b09973
复制
发表时间：
2018-12
期刊：
影响因子：
--
通讯作者：
Anh Khoa Augustin Lu;Tomoe Yayama;T. Morishita;M. Spencer;T. Nakanishi
中科院分区：
文献类型：
--
作者：
Anh Khoa Augustin Lu;Tomoe Yayama;T. Morishita;M. Spencer;T. Nakanishi
揭示了双层GaN显示屈曲的新结构，并利用第一性原理计算研究了它们的结构和电子性质。层状GaN是一种很有前途的二维半导体材料。
New structures of bilayer GaN displaying buckling are revealed, and their structural and electronic properties are studied using first-principles calculations. Layered GaN is a promising two-dimens...