An oxide filled extended trench gate super junction MOSFET structure
An oxide filled extended trench gate super junction MOSFET structure
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DOI：
10.1088/1674-1056/18/3/065
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发表时间：
2009-03
影响因子：
1.7
通讯作者：
Wang Cai-lin;Sun-Gon Jun
中科院分区：
文献类型：
--
作者：
Wang Cai-lin;Sun-Gon Jun
This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.
