Visible lasing from GaN:Eu optical cavities on sapphire substrates
Visible lasing from GaN:Eu optical cavities on sapphire substrates
复制标题
蓝宝石衬底上的 GaN:Eu 光学腔发出可见激光
DOI：
10.1016/j.optmat.2005.09.060
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发表时间：
2006
影响因子：
3.9
通讯作者：
A. Steckl
中科院分区：
文献类型：
--
作者：
J. Park;A. Steckl
我们报道了在蓝宝石衬底上生长的掺Eu GaN薄膜的可见（红色）激光发射。边缘发射满足受激发射特性的要求：超线性特性、谱线窄化、偏振效应、寿命缩短和法布里-珀罗腔中的纵模。GaN：Eu有源层具有低的激光起始阈值（~ 10 kW/cm ~ 2）。光增益和光损耗分别为50和20 cm −1。生长条件进行了研究增益增强和损失减少。为了获得高增益和低损耗的有源层，需要富N的生长条件。与平面波导相比，通道波导腔的增益值增加了5倍。
We report visible (red) lasing emission from Eu-doped GaN thin films grown on sapphire substrates. The edge emission fulfills the requirements of stimulated emission properties: super-linear characteristic, spectrum line narrowing, polarization effect, lifetime reduction, and longitudinal modes in a Fabry–Perot cavity. The GaN:Eu active layer has low threshold (∼10kW/cm2) for the onset of lasing. The optical gain and loss are of the order of 50 and 20cm−1, respectively. Growth conditions are investigated for gain enhancement and loss reduction. To obtain the high gain and low loss active layer, N-rich growth conditions are required. Channel waveguide cavities result in 5× increase in gain value compared to planar waveguides.