NOx gas sensing properties of tungsten oxide thin films synthesized by pulsed laser deposition method
NOx gas sensing properties of tungsten oxide thin films synthesized by pulsed laser deposition method
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DOI：
10.1016/s0169-4332(02)00333-1
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发表时间：
2002-09-30
影响因子：
6.7
通讯作者：
Ohshima, T
中科院分区：
文献类型：
--
作者：
Kawasaki, H;Namba, J;Ohshima, T
采用脉冲准分子激光沉积方法，在氧气氛中在硅(100)和氧化铝衬底上沉积了WO_3薄膜。用掠射角X射线衍射仪测量了WO_3薄膜的晶体结构和晶体取向，结果表明，在P-O2=10Pa时制备的WO_3薄膜有明显的晶态WO_3(0-1)、(1-1)、(2-1)、(12-1)、(0-2)、(1-12)和(0-2 2)峰。在P-O2=10Pa200ppm NOx条件下合成的WO_3薄膜的最大灵敏度随衬底温度的升高而增加。在400℃的工作温度下，对200ppm NO和200ppm NO2的最大灵敏度分别约为65和170。衬底温度对WO_3薄膜的NOx气敏性能有显著影响。(C)2002 Elsevier Science B.V.保留所有权利。
Tungsten oxide (WO3) thin films have been deposited on silicon(1 0 0) and alumina substrates by using a pulsed excimer laser deposition method in oxygen gas. The crystalline structure and crystallographic orientation of the WO3 films, measured by glancing-angle X-ray diffraction (GXRD) system, suggested that there were distinct peaks of crystalline WO3(0 0 1), (1 1 1), (2 0 1), (12 1), (0 0 2), (1 12), and (0 2 2) on the film prepared at P-O2 = 10 Pa. The maximum sensitivity of WO3 film, synthesized at P-O2 = 10 Pa for 200 ppm NOx was increased with increasing substrate temperature. The maximum sensitivity for 200 ppm NO and 200 ppm NO2, were approximately 65 and 170, respectively, at the operating temperature of 400 degreesC. The substrate temperature results in a notable change in NOx gas sensing properties of WO3 thin films. (C) 2002 Elsevier Science B.V. All rights reserved.