Work-Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light-Emitting Diodes
Work-Function Engineering of Graphene Anode by Bis(trifluoromethanesulfonyl)amide Doping for Efficient Polymer Light-Emitting Diodes
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DOI：
10.1002/adfm201301386
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发表时间：
2013-10-01
影响因子：
19
通讯作者：
Jeon, Duk Young
中科院分区：
文献类型：
--
作者：
Kim, Donghyuk;Lee, Dongchan;Jeon, Duk Young
石墨烯已被认为是一种潜在的替代透明和柔性电极，用于取代市售的氧化铟锡（ITO）阳极。然而，与ITO相比，石墨烯的相对高的薄层电阻和低的功函数限制了石墨烯作为有机或聚合物发光二极管（OLED或PLED）的阳极的应用。在此，通过使用双（三氟甲磺酰基）酰胺（TFSA，[CF 3SO 2]（2）NH）掺杂的石墨烯阳极制备的柔性PLED被证明具有低薄层电阻和高功函数。石墨烯通过简单的旋涂工艺容易地掺杂有TFSA。在TFSA掺杂之后，具有约88%的光学透射率的TFSA掺杂的五层石墨烯的薄层电阻低至约90 sq（-1）。在TFSA掺杂的石墨烯阳极上制造的PLED的最大电流效率和功率效率分别为9.6 cd A（-1）和10.5 lm W-1;这些值明显高于在原始石墨烯阳极上制造的PLED的那些值，并且与ITO阳极的那些值相当。
Graphene has been considered to be a potential alternative transparent and flexible electrode for replacing commercially available indium tin oxide (ITO) anode. However, the relatively high sheet resistance and low work function of graphene compared with ITO limit the application of graphene as an anode for organic or polymer light-emitting diodes (OLEDs or PLEDs). Here, flexible PLEDs made by using bis(trifluoromethanesulfonyl)amide (TFSA, [CF3SO2](2)NH) doped graphene anodes are demonstrated to have low sheet resistance and high work function. The graphene is easily doped with TFSA by means of a simple spin-coating process. After TFSA doping, the sheet resistance of the TFSA-doped five-layer graphene, with optical transmittance of approximate to 88%, is as low as approximate to 90 sq(-1). The maximum current efficiency and power efficiency of the PLED fabricated on the TFSA-doped graphene anode are 9.6 cd A(-1) and 10.5 lm W-1, respectively; these values are markedly higher than those of the PLED fabricated on pristine graphene anode and comparable to those of an ITO anode.