Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures.
Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures.
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DOI：
10.3390/ma10101183
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发表时间：
2017-10-16
期刊：
影响因子：
--
通讯作者：
Shamonin M
中科院分区：
文献类型：
--
作者：
Burdin DA;Ekonomov NA;Chashin DV;Fetisov LY;Fetisov YK;Shamonin M
实验研究了平面复合材料结构中的谐振直接磁电效应与温度的关系。尺寸为5 mm×20 mm的矩形样品采用厚度为20-200μm的非晶态(金属玻璃)合金或镍的铁磁层和厚度为500μm的单晶Langatate材料压电层或厚度为500μm的锆钛酸铅压电陶瓷。结果表明，磁电效应的有效特性，如机械共振频率fr、品质因数Q和共振频率下磁电系数αE的大小与温度有关。建立了磁电效应特性的温度变化与材料参数杨氏系数Y、各层声学品质因数、压电层的介电常数ε、压电层的压电模d以及铁磁层的压磁系数λ(N)的温度变化之间的关系。首次观察到温度对非线性磁电效应特性的影响。研究结果对设计具有特定温度特性的磁电异质结，特别是热稳定磁电器件具有一定的参考价值。
The dependence of the resonant direct magnetoelectric effect on temperature is studied experimentally in planar composite structures. Samples of rectangular shapes with dimensions of 5 mm × 20 mm employed ferromagnetic layers of either an amorphous (metallic glass) alloy or nickel with a thickness of 20–200 μm and piezoelectric layers of single crystalline langatate material or lead zirconate titanate piezoelectric ceramics with a thickness of 500 μm. The temperature of the samples was varied in a range between 120 and 390 K by blowing a gaseous nitrogen stream around them. It is shown that the effective characteristics of the magnetoelectric effect—such as the mechanical resonance frequency fr, the quality factor Q and the magnitude of the magnetoelectric coefficient αE at the resonance frequency—are contingent on temperature. The interrelations between the temperature changes of the characteristics of the magnetoelectric effect and the temperature variations of the following material parameters—Young’s modulus Y, the acoustic quality factor of individual layers, the dielectric constant ε, the piezoelectric modulus d of the piezoelectric layer as well as the piezomagnetic coefficients λ(n) of the ferromagnetic layer—are established. The effect of temperature on the characteristics of the nonlinear magnetoelectric effect is observed for the first time. The results can be useful for designing magnetoelectric heterostructures with specified temperature characteristics, in particular, for the development of thermally stabilized magnetoelectric devices.
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影响因子：
3.4
作者：
Burdin, Dmitrii;Chashin, Dmitrii;Shamonin, Mikhail
通讯作者：
Shamonin, Mikhail
影响因子：
0.7
作者：
Bush, A. A.;Kamentsev, K. E.;Fetisov, L. Y.
通讯作者：
Fetisov, L. Y.
影响因子：
3.4
作者：
Li, Fei;Xu, Zhuo;Yao, Xi
通讯作者：
Yao, Xi
影响因子：
2.7
作者：
Burdin, D. A.;Chashin, D. V.;Srinivasan, G.
通讯作者：
Srinivasan, G.
影响因子：
3.7
作者：
Bichurin, MI;Petrov, VM;Srinivasan, G
通讯作者：
Srinivasan, G