Solution-processed n-type organic thin-film transistors with high field-effect mobility
Solution-processed n-type organic thin-film transistors with high field-effect mobility
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DOI：
10.1063/1.2130712
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发表时间：
2005-11-14
影响因子：
4
通讯作者：
Kikuchi, K
中科院分区：
文献类型：
--
作者：
Chikamatsu, M;Nagamatsu, S;Kikuchi, K
我们报道了基于C-60衍生物的溶液处理n型有机薄膜晶体管(OTFT)的性能。用长链烷基取代的C-60，C60-稠合的N-甲基吡咯烷-间-C12苯基(C60MC12)作为半导体层。在饱和状态下，C60MC12薄膜晶体管的电子迁移率高达0.067 cm(2)/V S。X射线衍射分析结果表明，C60MC12有源层形成了高度有序的晶化膜。我们发现，长链烷基链的自组装能力对制备高度有序的晶体薄膜起着重要作用，从而导致在溶液处理的n型OTFT中实现高电子迁移率。(C)2005年美国物理研究所。
We report the performance of solution-processed n-type organic thin-film transistors (OTFTs) based on C-60 derivatives. Long-chain alkyl-substituted C-60, C60-fused N-methylpyrrolidine-meta-C12 phenyl (C60MC12), was used as a semiconducting layer. The C60MC12-thin-film transistor shows high electron mobility of 0.067 cm(2)/V s in saturation regime. From the result of x-ray diffraction analysis, the C60MC12 active layer forms highly ordered crystalline film. We found that self-assemble ability of long alkyl chains plays an important role for fabrication of highly ordered crystalline film, leading to achievement of high electron mobility in solution-processed n-type OTFTs. (C) 2005 American Institute of Physics.