Precision measurement of the electron affinity of niobium
Precision measurement of the electron affinity of niobium
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铌电子亲和势的精密测量
DOI：
10.1103/physreva.93.020501
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发表时间：
2016-02-17
影响因子：
2.9
通讯作者：
Ning, Chuangang
中科院分区：
文献类型：
--
作者：
Luo, Zhihong;Chen, Xiaolin;Ning, Chuangang
由于p波光剥离阈值截面小，电子结构复杂，许多过渡元素的电子亲和势的不确定性仍然保持在10 meV左右，这是三十年来没有得到改善的。在这项研究中，用慢电子速度成像方法测量了Nb的电子亲和势为917.40(6)meV或7399.35(50)cm(-1)。与上次测量相比，准确度提高了400倍以上。Nb-的精细结构分别为：D-5(0)上方16.87(12)meV(D-5(1))、46.75(12)meV(D-5(2))、86.85(12)meV(D-5(3))和156.00(37)meV(D-5(4))。
Due to the low cross section of p-wave threshold photodetachment and the complicated electronic structures, the uncertainty of electron affinities for many transition elements still remains around 10 meV, which has not been improved for three decades. In this study, the electron affinity of Nb is measured as 917.40(6) meV or 7399.35(50) cm(-1) using the slow electron velocity imaging method. The accuracy was improved by a factor of more than 400 with respect to the previous measurement. Furthermore, the fine structures of Nb- were successfully resolved: 16.87(12) meV (D-5(1)), 46.75(12) meV (D-5(2)), 86.85(12) meV (D-5(3)), and 156.00(37) meV (D-5(4)) above the ground D-5(0), respectively.