Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm
Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm
复制标题
DOI：
10.3390/cryst12121812
复制
发表时间：
2022-12
期刊：
影响因子：
2.7
通讯作者：
Chunyue Zhang;Ke Jiang;Xiaojuan Sun;Dabing Li
中科院分区：
文献类型：
--
作者：
Chunyue Zhang;Ke Jiang;Xiaojuan Sun;Dabing Li
AlGaN基深紫外（DUV）发光二极管（LED），特别是波长低于250 nm的LED，在杀菌消毒、气体传感等领域具有巨大的应用潜力。然而，随着发射波长的减小，出现性能崩溃，并且亚250 nm LED的外量子效率（EQE）通常长时间低于1%。低效率是由于所有方面的问题积累，包括n/p型掺杂和接触，载流子限制和运输，光提取等，以实现高EQE的子250 nm LED，问题和解决方案需要讨论。本文对亚250 nm LED的研究进展、发展瓶颈以及相应的解决方案进行了详细的总结和讨论。
AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs), especially with a wavelength below 250 nm, have great application potential in the fields of sterilization and disinfection, gas sensing, and other aspects. However, with the decrease of emission wavelength, performance collapse occurs and the external quantum efficiencies (EQE) of sub-250 nm LEDs are usually below 1% for a long time. Low efficiencies are resulted from problem accumulation of all aspects, including n/p-type doping and contacts, carrier confinements and transports, light extraction, etc. To achieve high EQE of sub-250 nm LEDs, problems and solutions need to be discussed. In this paper, the research progress, development bottlenecks, and corresponding solutions of sub-250 nm LEDs are summarized and discussed in detail.