On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well
On the robustness of ultra-high voltage 4H-SiC IGBTs with an optimized retrograde p-well
复制标题
具有优化逆行 p 阱的超高压 4H-SiC IGBT 的鲁棒性
DOI：
10.1109/demped.2019.8864804
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
F. Udrea
中科院分区：
文献类型：
--
作者：
Amit K. Tiwari;S. Perkin;N. Lophitis;Marina Antoniou;T. Trajkovic;F. Udrea
研究了由优化的倒p阱构成的超高压（> 10 kV）SiC IGBT的鲁棒性。根据广泛的TCAD模拟，我们表明，除了提供一个强大的控制阈值电压和消除穿通，逆行是非常有效的减少超高压SiC IGBT的栅极氧化物上的应力。我们表明，10 kV SiC IGBT的逆行p-井组成的栅氧化物中表现出大大降低的峰值电场相比，包括一个传统的p-井的对应物。使用深度浅至1 µm的优化倒p阱，10 kV额定SiC IGBT的栅极氧化层中的峰值电场可以降低至2 MV.cm−1以下，这是实现高压功率器件高度可靠性的先决条件。因此，我们建议，倒p阱是非常有前途的发展> 10 kV的SiC IGBT。
The robustness of ultra-high voltage (>10kV) SiC IGBTs comprising of an optimized retrograde p-well is investigated. Under extensive TCAD simulations, we show that in addition to offering a robust control on threshold voltage and eliminating punch-through, the retrograde is highly effective in terms of reducing the stress on the gate oxide of ultra-high voltage SiC IGBTs. We show that a 10 kV SiC IGBT comprising of the retrograde p-well exhibits a much-reduced peak electric field in the gate oxide when compared with the counterpart comprising of a conventional p-well. Using an optimized retrograde p-well with depth as shallow as 1 µm, the peak electric field in the gate oxide of a 10kV rated SiC IGBT can be reduced to below 2 MV.cm−1, a prerequisite to achieve a high-degree of reliability in high-voltage power devices. We therefore propose that the retrograde p-well is highly promising for the development of>10kV SiC IGBTs.